Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability both $\mathrm{n}$- $\mathrm{p}$-type high Curie temperatures. On other hand, (Ga,Fe)As, which has same zinc-blende crystal structure FMSs, shows paramagnetism. The origin different magnetic properties in remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) x-ray circular dichroism (XMCD) investigate electronic Fe ions a paramagnetic $({\mathrm{Ga}}_{0.95},{\mathrm{Fe}}_{0.05})\mathrm{As}$ thin film. observed $2p\text{\ensuremath{-}}3d$ RPES spectra show that $3d$ states similar those (Ga,Fe)Sb. estimated Fermi level is located middle band gap (Ga,Fe)As. ${L}_{2,3}$ XMCD preedge structures, not indicating minority-spin (\ensuremath{\downarrow}) ${e}_{\ensuremath{\downarrow}}$ vacant $({\mathrm{Ga}}_{0.95},{\mathrm{Fe}}_{0.05})\mathrm{As}$. results suggest carrier-induced interaction short ranged weaker than FMSs. experimental findings electron occupancy contributes appearance ferromagnetism semiconductors, well $\mathrm{n}$-type compounds.